fast recovery diode rf05va1s l applications l dimensions (unit : mm) l land size figure (unit : mm) general rectification l features 1)small mold type. (tumd2) 2)ultra high switching speed 3)low v f l construction silicon epitaxial planer l structure l absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v io a i fsm a tj ? c tstg ? c l electrical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions forward voltage v f - - 0.98 v i f =0.5a i r - - 10 a v r =100v reverse recovery time trr - - 25 ns i f =0.5a,i r =1a,irr=0.25*i r storage temperature - 55 to + 150 (*1)on the glass epoxy substrate parameter reverse current average rectified forward current (*1) 0.5 forward current surge peak (60hz ? 1cyc) 6 junction temperature 150 l taping dimensions (unit : mm) parameter limits reverse voltage (repetitive) 100 reverse voltage (dc) 100 1.1 2.0 0.8 0.5 tumd2 rohm : tumd2 dot (year week factory) + day 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 4.00.1 2.00.05 1.550.1 0 1.430.05 4.00.1 1.00.2 0 2.75 3.50.05 1.750.1 8.00.2 0.250.05 0.90.08 2.80.05 1.30.05 0.80.05 2.50.2 1.90.1 0.60.2 0.1 0.170.1 0.05
rf05va1s 0.01 0.1 1 10 300 400 500 600 700 800 900 1000 1100 1200 1300 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) tj=125 c tj=25 c tj=150 c tj=75 c 0 1 10 100 1000 0 20 40 60 80 100 tj=150 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics tj=125 c tj=25 c tj=75 c 1 10 100 0 10 20 30 f=1mhz capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics 800 810 820 830 840 850 v f dispersion map forward voltage:v f (mv) ave:819.3mv i f =0.5a 0.1 1 10 reverse current:i r (na) i r dispersion map ta=25 c v r =100v n=20pcs ave:0.80na 20 21 22 23 24 25 26 27 28 29 30 ave:28.18pf f=1mhz v r =0v capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf05va1s 0 5 10 15 20 25 30 ave:12.2a 8.3ms i fsm 1cyc i fsm dispersion map peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 ave:12.2ns i f =0.5a i r =1a irr=0.25 i r trr dispersion map reverse recovery time:trr(ns) 1 10 100 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 1 10 100 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 1 10 100 1000 0.001 0.1 10 1000 rth(j - a) on glass - epoxy substrate soldering land 6mm rth(j - a) on glass - epoxy substrate soldering land 10mm rth(j - l) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.2 0.4 0.6 0.8 1 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rf05va1s 0 0.2 0.4 0.6 0.8 1 1.2 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) ambient temperature:ta( c ) derating curve (io - ta) t tj=150 c d=t/t t v r io v r =150v 0a 0v 0 0.2 0.4 0.6 0.8 1 1.2 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=150 c d=t/t t v r io v r =150v 0a 0v 0 5 10 15 20 25 30 no break at 30kv c=100pf r=1.5k c=200pf r=0 ave:13.3kv electrostatic discharge test esd(kv) esd dispersion map 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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